Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Banti Yadav;Pankaj Srivastava;Varun Sharma
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Abstract

Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the $\mathbf {E-k}$ diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters $\mathbf {(R_{Q}, L_{K}, C_{Q})}$ . The calculation of the transmission channels $\mathbf {(N_{ch})}$ against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of $\mathbf {R_{Q}}$ (6.45 Kohm), $\mathbf {L_{K}}$ $\mathbf {(6.42nH/\mu m)}$ , and $ \mathbf {C_{Q}(6.16pF/cm)}$ for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.
我们采用第一原理方法,探究了用于互连应用的 n 掺杂人字形硫化锗纳米带(ZGeSNR)的电子、结构和传输特性。我们探讨了硫替代的两种可能情况,即顶边的 S 替代和底边的 S 替代。我们计算的形成能表明,掺磷(P)和掺氮(N)的 ZGeSNR 构型在热力学上都是稳定的。此外,通过 $\mathbf {E-k}$ 图和 DOS 曲线计算,我们还发现掺杂结构与原始结构相比具有金属特性。最后,我们进行了基于两个探针器件模型的传输分析,对关键的小信号动态参数 $\mathbf {(R_{Q}, L_{K}, C_{Q})}$ 进行了评论。然后研究了传输通道 $\mathbf {(N_{ch})}$ 与可变偏置电压的关系,结果表明 $\mathbf {R_{Q}}$ (6.45 Kohm)、$\mathbf {L_{K}}$ $\mathbf {(6.42nH/\mu m)}$和$\mathbf {C_{Q}(6.16pF/cm)}$ 为掺杂了 S-site-P的 ZGeSNR(底部),使其成为纳米级互连的有力竞争者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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