与 BEOL 兼容的 5 nm 超薄 HZO 铁电电容器，具有高剩磁极化和出色的耐久性

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-03-31 DOI:10.1109/TNANO.2024.3407817

Li-Cheng Teng;Yu-Che Huang;Shu-Jui Chang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien

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引用次数: 0

摘要

在这封信中，我们利用钼（Mo）作为电极，成功地制造出了超薄 5 nm HZO 金属铁电（MFM）电容器。通过提出一种新颖的原子层沉积（ALD）方案，我们克服了下层钼电极氧化的难题；通过热增强 ALD 沉积了 2 nm 的 HZO，然后通过等离子体增强 ALD 沉积了 3 nm 的 HZO。在工作电压为 2 V 时，制备的样品的 2Pr 值为 38.5 μC/cm2。此外，在耐久性测试中，样品在经过 1010 次循环后仍能保持 36.9 μC/cm2 的 2Pr 值（从原始到 1010 次循环的△2Pr/2Prpristine ≈ 7%）。我们的方法的最高工艺温度为 400 °C，因此符合生产线后端 (BEOL) 集成的严格要求。

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BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance

In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5 nm HZO utilizing Molybdenum (Mo) as the electrodes. By proposing a novel atomic layer deposition (ALD) scheme, we overcome the challenge of oxidation of the lower Mo electrode; a 2 nm HZO deposited by thermally enhanced ALD followed by a 3 nm HZO deposited by plasma enhanced ALD. The fabricated sample demonstrated a 2Pr value of 38.5 μC/cm ² at an operating voltage of 2 V. Furthermore, in endurance testing, the sample maintained a 2Pr value of 36.9 μC/cm ² even after 10 ¹⁰ cycles (△2Pr/2Pr _pristine ≈ 7% from pristine to 10 ¹⁰ cycles). With a maximum process temperature of 400 °C, our approach thereby meets the stringent requirement of Back-End-of-Line (BEOL) integration.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.