FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach

Abstract

In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (>1 × 1021 ${\text{cm}^{-3}}$), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field $({{E}_{\text{c}}})$ is important to maximize the performance of FeRFETs.