基于可编程电压可调RRAM的多模式可配置物理不可克隆功能

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yijun Cui;Jiang Li;Chongyan Gu;Chenghua Wang;Weiqiang Liu
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引用次数: 0

摘要

电阻式随机存取存储器(RRAM)为高效节能的内存逻辑(LiM)系统提供了一个很有前途的解决方案。本文介绍了一种多模式可配置物理不可克隆功能(MC-PUF),专为基于安全rram的LiM应用量身定制,利用传统的单晶体管-单rram (1T1R)阵列。MC-PUF通过修改RRAM的编程电压在多种模式下工作,从而捕获每个RRAM在不同条件下的不同变化。在弱写模式下,MC-PUF利用RRAM的固有变化,通过设置编程电压来实现50%的切换概率,从而随机分配“0”或“1”状态。在并联竞争模式下,它通过选择两个并联rram产生响应,其中一个保持高电阻状态,另一个切换到低电阻状态。与传统设计相比,这种配置允许MC-PUF产生更多的挑战响应对(crp),从而通过增加熵来增强安全性。该设计通过使用紧凑的Spice模型和UMC 55nm CMOS库以及商用RRAM芯片的实验硬件平台进行了仿真验证。仿真和硬件实现结果表明,所提出的MC-PUF具有较高的可靠性、唯一性和可配置性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Multi-Mode Configurable Physical Unclonable Function Based on RRAM With Adjustable Programmable Voltage
Resistive random access memory (RRAM) presents a promising solution for energy-efficient logic-in-memory (LiM) systems. This paper introduces a Multi-mode Configurable Physical Unclonable Function (MC-PUF) tailored for secure RRAM-based LiM applications, utilizing a conventional one-transistor-one-RRAM (1T1R) array. The MC-PUF operates in multiple modes by modifying the programming voltages of the RRAM, which captures the distinct variations of each RRAM under varying conditions. In weak write mode, the MC-PUF exploits the inherent variations of RRAM by setting the programming voltages to achieve a 50% switching probability, thereby randomly assigning ‘0’ or ‘1’ states. In parallel competition mode, it generates responses by selecting two parallel RRAMs, with one remaining in a high resistance state (HRS) and the other switching to a low resistance state (LRS). This configuration allows the MC-PUF to generate more challenge-response pairs (CRPs) compared to conventional designs, thus enhancing security through increased entropy. The design was validated through simulations using a compact Spice model and the UMC 55 nm CMOS library, as well as on an experimental hardware platform with commercial RRAM chips. Results from both simulations and hardware implementations indicate that the proposed MC-PUF exhibits high reliability, excellent uniqueness, and superior configurability.
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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