{"title":"Realization of Compact High-Performance EAM Based on Numerical Analysis of ITO, VO2 and Graphene on SiO2 Platform","authors":"Himanshu R. Das;Haraprasad Mondal;Rajeev Kumar","doi":"10.1109/TNANO.2025.3552525","DOIUrl":null,"url":null,"abstract":"Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO<sub>2</sub>), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO<sub>2</sub> platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (E<sub>bit</sub>) below 2.20 fJ/bit and modulation frequency (<inline-formula><tex-math>$f$</tex-math></inline-formula>) exceeding 1300 GHz at an IL <inline-formula><tex-math>$< $</tex-math></inline-formula> 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"178-188"},"PeriodicalIF":2.1000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10930742/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO2), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO2 platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (Ebit) below 2.20 fJ/bit and modulation frequency ($f$) exceeding 1300 GHz at an IL $< $ 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.
期刊介绍:
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.