Realization of Compact High-Performance EAM Based on Numerical Analysis of ITO, VO2 and Graphene on SiO2 Platform

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Himanshu R. Das;Haraprasad Mondal;Rajeev Kumar
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引用次数: 0

Abstract

Plasmonic based electro-absorption modulators (EAMs) has paved the way for high-speed photonic integrated circuits (PICs). This paper demonstrates the numerical analysis and the structural design of the EAM using various plasmonic materials, such as vanadium dioxide (VO2), indium-tin-oxide (ITO) and graphene, to modulate signals traveling through the waveguide on an SiO2 platform. It also explores key performance metrics, including the extinction ratio (ER) and the figure-of-merit (FOM), which is related to the device's insertion loss (IL). By optimizing the structural parameters and utilizing the plasmonic materials, the device characteristics, especially the effective-mode-index (EMI), is modified to attain the epsilon-near-zero (ENZ) condition. The ITO-based EAM attains a high ER of 22.24 dB/μm with a FOM of 482.45, while the graphene-ITO based EAM obtains an ER of 20.31 dB/μm and a FOM of 296.06 at 1.55 μm wavelength. Both devices have an energy consumption per bit (Ebit) below 2.20 fJ/bit and modulation frequency ($f$) exceeding 1300 GHz at an IL $< $ 0.07 dB/μm. The investigated EAMs hold potential for future-generation PICs.
基于ITO、VO2和石墨烯在SiO2平台上的数值分析实现紧凑型高性能EAM
基于等离子体的电吸收调制器(eam)为高速光子集成电路(PICs)铺平了道路。本文演示了利用各种等离子体材料,如二氧化钒(VO2)、氧化铟锡(ITO)和石墨烯,在SiO2平台上调制通过波导的信号的数值分析和结构设计。它还探讨了关键的性能指标,包括消光比(ER)和与器件插入损耗(IL)相关的品质系数(FOM)。通过优化结构参数和利用等离子体材料,改进器件特性,特别是有效模指数(EMI),使器件达到接近零(ENZ)的状态。ito基EAM在1.55 μm波长处的ER为20.31 dB/μm, FOM为296.06,ER为22.24 dB/μm。这两种器件的每比特能耗(Ebit)低于2.20 fJ/bit,调制频率(f$)在IL $<下超过1300 GHz;$ 0.07 dB/μm。所研究的eam具有成为下一代PICs的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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