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2013 IEEE International Meeting for Future of Electron Devices, Kansai最新文献

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Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor 溅射Ta2O5/ZnO薄膜的生长及其在离子敏感场效应晶体管中的应用
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602233
K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, S. Kadokura, Yutaka Nakamitsu
{"title":"Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor","authors":"K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, S. Kadokura, Yutaka Nakamitsu","doi":"10.1109/IMFEDK.2013.6602233","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602233","url":null,"abstract":"High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130647729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiple-cell-upset hardened 6T SRAM using NMOS-centered layout 使用nmos为中心布局的多单元打乱硬化6T SRAM
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602257
S. Yoshimoto, K. Nii, H. Kawaguchi, M. Yoshimoto
{"title":"Multiple-cell-upset hardened 6T SRAM using NMOS-centered layout","authors":"S. Yoshimoto, K. Nii, H. Kawaguchi, M. Yoshimoto","doi":"10.1109/IMFEDK.2013.6602257","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602257","url":null,"abstract":"This paper presents a proposed NMOS-centered 6T SRAM cell layout that reduces a neutron-induced multiple-cell-upset (MCU) SER on a same wordline. We implemented an 1-Mb SRAM macro in a 65-nm CMOS process and irradiated neutrons as a neutron-accelerated test to evaluate the MCU SER. The proposed 6T SRAM macro improves the horizontal MCU SER by 67-98% compared with a general macro that has PMOS-centered 6T SRAM cells.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131636469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A study of optimization for efficiency and power control in an electromagnetic WPT system 电磁WPT系统效率与功率控制的优化研究
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602262
Giichi Sakemi, T. Yoshimura, Naoyuki Fukuda
{"title":"A study of optimization for efficiency and power control in an electromagnetic WPT system","authors":"Giichi Sakemi, T. Yoshimura, Naoyuki Fukuda","doi":"10.1109/IMFEDK.2013.6602262","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602262","url":null,"abstract":"In this study, the power efficiency in a WPT system is measured under the condition of various transmission distances and the optimum control of the parameters is considered in the system from the results. The change of the resonance frequencies according to the change of coupling coefficients improve the power transmission efficiencies of the system compared to the case of the fixed resonance frequency. In addition, we reveal the trade-off between the magnitude of the output power and the power efficiency in terms of the resonance frequency. From our analysis, the trade-off resonance frequency is derived at various transmission distances by numerical simulation.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128429383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory 电阻式开关存储器中NiO层导电丝电阻的温度依赖性
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602253
Yoshihumi Hamada, Takashi Kato, S. Otsuka, Tomohiro Shimizu, S. Shingubara
{"title":"Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory","authors":"Yoshihumi Hamada, Takashi Kato, S. Otsuka, Tomohiro Shimizu, S. Shingubara","doi":"10.1109/IMFEDK.2013.6602253","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602253","url":null,"abstract":"Investigation of I-V characteristic and temperature dependence of resistance in the resistive switching (RS) memory with NiO insulater was performed. Unipolar operation mode was obtained in this device. From temperature dependence of resistance, it is suggested that the low resistance state (LRS) is metallic conduction and the high resistance state (HRS) is variable-range hopping (VRH) conduction.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117282449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Size and geometric effects on conduction band structure of GaAs nanowires 尺寸和几何对砷化镓纳米线导带结构的影响
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602267
Hajime Tanaka, N. Morioka, S. Mori, J. Suda, T. Kimoto
{"title":"Size and geometric effects on conduction band structure of GaAs nanowires","authors":"Hajime Tanaka, N. Morioka, S. Mori, J. Suda, T. Kimoto","doi":"10.1109/IMFEDK.2013.6602267","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602267","url":null,"abstract":"The conduction band structure of GaAs nanowires with various cross-sectional shapes and orientations was calculated by a tight-binding model and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases. However, the amount of the increase in mass is strongly dependent on the wire orientations and substrate faces of nanowires, which originates from the anisotropy of Γ valley of bulk GaAs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126235301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability 具有优异电稳定性的新型SrBi4Ti4O15/CaBi4Ti4O15薄膜电容器的漏电流特性
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602250
H. Kawahara, Naoya Tahara, Shuhei Nomura, K. Yamashita, M. Noda, H. Uchida, H. Funakubo
{"title":"Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability","authors":"H. Kawahara, Naoya Tahara, Shuhei Nomura, K. Yamashita, M. Noda, H. Uchida, H. Funakubo","doi":"10.1109/IMFEDK.2013.6602250","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602250","url":null,"abstract":"SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122480761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible ZnO thin-film transistors on plastic substrates produced at room temperature 室温下塑料衬底上的柔性ZnO薄膜晶体管
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602240
Y. Sun, Y. Kimura, T. Maemoto, S. Sasa
{"title":"Flexible ZnO thin-film transistors on plastic substrates produced at room temperature","authors":"Y. Sun, Y. Kimura, T. Maemoto, S. Sasa","doi":"10.1109/IMFEDK.2013.6602240","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602240","url":null,"abstract":"We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132408874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low energy silicon solution toward smart and sustainable society 低能耗硅解决方案，迈向智能和可持续发展的社会
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602220
T. Masuhara
{"title":"Low energy silicon solution toward smart and sustainable society","authors":"T. Masuhara","doi":"10.1109/IMFEDK.2013.6602220","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602220","url":null,"abstract":"Low-voltage technology solutions for future IT systems are discussed. New SOTB CMOS transistors with small variation for Vth and Ion, new non-volatile memories for cache and data storage, atom switch for logic reconfiguration, and new carbon interconnect are discussed.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132789663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures AlxTiyO/GaAs(001)金属-绝缘体-半导体结构的I-V特性
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602237
T. Ui, M. Kudo, Toshi-kazu Suzuki
{"title":"I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures","authors":"T. Ui, M. Kudo, Toshi-kazu Suzuki","doi":"10.1109/IMFEDK.2013.6602237","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602237","url":null,"abstract":"We investigated I-V characteristics of Al<sub>x</sub>Ti<sub>y</sub>O/GaAs(001) metal-insulator-semiconductor structures, in which Al<sub>x</sub>Ti<sub>y</sub>O thin films were prepared by atomic layer deposition utilizing alternative supply of Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> precursors. From Poole-Frenkel plots, we estimated dielectric constants of Al<sub>x</sub>Ti<sub>y</sub>O thin films, which are useful as high-k dielectrics for III-V device processing.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114075708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atmospheric pressure processed InGaZnO thin-film transistors 常压处理InGaZnO薄膜晶体管
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602270
M. Furuta, T. Kawaharamura
{"title":"Atmospheric pressure processed InGaZnO thin-film transistors","authors":"M. Furuta, T. Kawaharamura","doi":"10.1109/IMFEDK.2013.6602270","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602270","url":null,"abstract":"High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116555258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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