K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, S. Kadokura, Yutaka Nakamitsu
{"title":"溅射Ta2O5/ZnO薄膜的生长及其在离子敏感场效应晶体管中的应用","authors":"K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, S. Kadokura, Yutaka Nakamitsu","doi":"10.1109/IMFEDK.2013.6602233","DOIUrl":null,"url":null,"abstract":"High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor\",\"authors\":\"K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, S. Kadokura, Yutaka Nakamitsu\",\"doi\":\"10.1109/IMFEDK.2013.6602233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor
High-performance and transparent ion-sensitive field-effect transistor (ISFET) was prepared by a facing-target type sputtering method using the combination of a ZnO layer for the channel and a high-k Ta2O5 layer for the gate insulator. The ISFET showed a high transconductance of 2.3 mS, a low drift current of <; ±0.5 μA/h, a small gate leakage current of <; 2 nA, and a small hysteresis width of ~0.1 V. The typical pH sensitivity was ~84 μA/pH and ~55 mV/pH, and the time-constant for pH change was as small as 10 s. These parameters are comparable with those of commercially available Si ISFETs.
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