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2013 IEEE International Meeting for Future of Electron Devices, Kansai最新文献

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Artificial neural network using thin-film transistors - Working confirmation of asymmetric circuit - 利用薄膜晶体管的人工神经网络。非对称电路的工作确认
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602249
Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, T. Miyatani, T. Kasakawa, M. Kimura
{"title":"Artificial neural network using thin-film transistors - Working confirmation of asymmetric circuit -","authors":"Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, T. Miyatani, T. Kasakawa, M. Kimura","doi":"10.1109/IMFEDK.2013.6602249","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602249","url":null,"abstract":"We are developing neural networks of device level using thin-film transistors (TFT). By adopting an interconnect-type neural network and utilizing a characteristic shift of poly-Si TFTs as a variable strength of synapse connection, which was originally an issue, we realized the neuron consisting of eight TFTs and synapse of only one TFT. Particularly in this presentation, we confirmed the working by a circuit where the input and output elements are asymmetric. This is a result leading to a super-large, self-learning, and high-flexibility system.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127170837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates 在独立GaN衬底上制备的高压AlGaN/GaN hemt
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602244
K. Akira, T. Asano, H. Tokuda, M. Kuzuhara
{"title":"High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates","authors":"K. Akira, T. Asano, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602244","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602244","url":null,"abstract":"This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 μm exhibited a linear increase with increasing the gate-to-drain distance (Lgd), reaching more than 1200 V at Lgd=25 μm. It was found that the ON/OFF ratio in the drain current was only 104, indicating the need for further improvements in buffer structure design.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123655413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-power ultrahigh-speed wireless communication with short-millimeter-wave CMOS technology 采用短毫米波CMOS技术的低功耗超高速无线通信
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602221
M. Fujishima
{"title":"Low-power ultrahigh-speed wireless communication with short-millimeter-wave CMOS technology","authors":"M. Fujishima","doi":"10.1109/IMFEDK.2013.6602221","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602221","url":null,"abstract":"Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the D band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130779516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of non-parabolic band structure on quantum confined electronic states in 4H-SiC inversion layers 非抛物带结构对4H-SiC反转层量子约束电子态的影响
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602236
Ryuta Watanabe, Y. Kamakura
{"title":"Effect of non-parabolic band structure on quantum confined electronic states in 4H-SiC inversion layers","authors":"Ryuta Watanabe, Y. Kamakura","doi":"10.1109/IMFEDK.2013.6602236","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602236","url":null,"abstract":"We calculate two dimensional electronic states in 4H-SiC inversion layers based on empirical pseudopotential approach, and the nonparabolicity effects on the quantum confinement are discussed. It is shown that the in-plane effective mass for electrons significantly increases under the strong confinement conditions in the case of (0001) oriented substrate, eventually causing the degradation of the inversion layer mobility.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124876460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of a pocket doping in a Schottky tunneling FET 口袋掺杂对肖特基隧穿场效应管的影响
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602225
S. Guin, A. Chattopadhyay, A. Karmakar, A. Mallik
{"title":"Influence of a pocket doping in a Schottky tunneling FET","authors":"S. Guin, A. Chattopadhyay, A. Karmakar, A. Mallik","doi":"10.1109/IMFEDK.2013.6602225","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602225","url":null,"abstract":"In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134465235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Role of aluminum oxide cladding layers in heat conduction of a semiconductor slab with photonic crystal 氧化铝包层在光子晶体半导体板热传导中的作用
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602243
T. Okabe, M. Morifuji, M. Kondow
{"title":"Role of aluminum oxide cladding layers in heat conduction of a semiconductor slab with photonic crystal","authors":"T. Okabe, M. Morifuji, M. Kondow","doi":"10.1109/IMFEDK.2013.6602243","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602243","url":null,"abstract":"In order to clarify the role of cladding layers in heat transfer in a laser diode, we theoretically investigate heat transfer in a semiconductor slab having two dimensional photonic crystal, i.e. array of air holes. For a photonic crystal laser, temperature increase may be a serious problem since air holes can cause poor heat conduction even if large Q-factor reduces threshold current. Temperature changes calculated for structures with AlOx cladding layers show that the AlOx cladding layers reduce temperature rise down to about 2/5 compared with air-bridge structure.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125389077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A compact isolated gate driver using GaN HFETs on sapphire substrate integrated with a 5.8GHz electro-magnetic resonant coupler 采用蓝宝石衬底上的氮化镓hfet集成了5.8GHz电磁谐振耦合器的紧凑隔离栅驱动器
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602265
Yasufumi Kawai, S. Nagai, T. Fukuda, N. Otsuka, D. Ueda, N. Negoro, T. Ueda
{"title":"A compact isolated gate driver using GaN HFETs on sapphire substrate integrated with a 5.8GHz electro-magnetic resonant coupler","authors":"Yasufumi Kawai, S. Nagai, T. Fukuda, N. Otsuka, D. Ueda, N. Negoro, T. Ueda","doi":"10.1109/IMFEDK.2013.6602265","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602265","url":null,"abstract":"In this work, we developed a compact single-chip isolated gate driver with a high isolation voltage that requires no additional isolated voltage source. This developed gate driver employed “Drive-By-Microwave Technology,” which supplies an isolated signal and power by mixture to a power switching device by using wireless power transmission technology. It was also developed that a new compact butterfly-shaped electro-magnetic resonant coupler (EMRC) that can be integrated in the GaN HFETs gate driver chip. The fabricated single-chip isolated gate driver demonstrated the isolated direct driving of a GaN-GIT power switching device.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"499 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121053904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MEMS microphones on InP substrates for high performance digital ultrasonic sensors 用于高性能数字超声传感器的InP基板MEMS麦克风
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602256
S. Fujino, Yuta Mizuno, K. Takaoka, M. Mori, K. Maezawa
{"title":"MEMS microphones on InP substrates for high performance digital ultrasonic sensors","authors":"S. Fujino, Yuta Mizuno, K. Takaoka, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2013.6602256","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602256","url":null,"abstract":"This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone ashing of the photoresist to fabricate a hollow structure. This process was demonstrated to be damage-free, and suitable for integration with HEMTs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132293169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of TaOx nanoparitcles for resistive random access memory 阻性随机存储器中TaOx纳米粒子的性能评价
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602273
Keisuke Kado, T. Ban, M. Uenuma, Y. Ishikawa, I. Yamashita, Y. Uraoka
{"title":"Evaluation of TaOx nanoparitcles for resistive random access memory","authors":"Keisuke Kado, T. Ban, M. Uenuma, Y. Ishikawa, I. Yamashita, Y. Uraoka","doi":"10.1109/IMFEDK.2013.6602273","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602273","url":null,"abstract":"We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"544 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetric AC electrophoresis with insulated electrodes: Toward positional control of microand nanoscale devices 绝缘电极的不对称交流电泳:微纳米级器件的位置控制
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602274
A. Shibata, K. Komiya, Keiji Watanabe, Takuya Sato, T. Shiomi, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell
{"title":"Asymmetric AC electrophoresis with insulated electrodes: Toward positional control of microand nanoscale devices","authors":"A. Shibata, K. Komiya, Keiji Watanabe, Takuya Sato, T. Shiomi, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell","doi":"10.1109/IMFEDK.2013.6602274","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602274","url":null,"abstract":"This paper demonstrates electrophoresis of silicon micro-rods by applying asymmetric AC bias to two electrodes capped with a thin dielectric film. The silicon micro-rods migrate bi-directionally when asymmetric AC bias is applied to the electrodes. The insulated electrodes significantly contribute to elimination of bubbling and contamination originating from electrochemical reactions, which makes adoption of the technique to mass production processes realistic. This technique is widely applicable to positional control of small objects including micro- and nanoscale devices.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126961092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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