阻性随机存储器中TaOx纳米粒子的性能评价

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602273

Keisuke Kado, T. Ban, M. Uenuma, Y. Ishikawa, I. Yamashita, Y. Uraoka

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引用次数: 0

摘要

我们展示了利用生物纳米工艺(BNP)使用TaOx纳米颗粒(NPs)的电阻性记忆。TaOx NPs由铁蛋白产生。用导电原子力显微镜对含有TaOx NPs的ReRAM进行了电阻开关行为评价。这表明利用BNP的TaOx纳米reram可以成为一种高密度的非易失性存储器。

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Evaluation of TaOx nanoparitcles for resistive random access memory

We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory.

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2013 IEEE International Meeting for Future of Electron Devices, Kansai

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