{"title":"口袋掺杂对肖特基隧穿场效应管的影响","authors":"S. Guin, A. Chattopadhyay, A. Karmakar, A. Mallik","doi":"10.1109/IMFEDK.2013.6602225","DOIUrl":null,"url":null,"abstract":"In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of a pocket doping in a Schottky tunneling FET\",\"authors\":\"S. Guin, A. Chattopadhyay, A. Karmakar, A. Mallik\",\"doi\":\"10.1109/IMFEDK.2013.6602225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of a pocket doping in a Schottky tunneling FET
In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.
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