Influence of a pocket doping in a Schottky tunneling FET

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602225

S. Guin, A. Chattopadhyay, A. Karmakar, A. Mallik

引用次数: 2

Abstract

In this paper, a detailed investigation of the impact of using a pocket in a Schottky-barrier tunneling FET (SBTFET) is reported. It is found that a pocket at both the source and the drain ends results in overall improvement of the device performance.

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口袋掺杂对肖特基隧穿场效应管的影响

本文详细研究了在肖特基势垒隧穿场效应管(SBTFET)中使用口袋的影响。研究发现，在源极和漏极两端都加一个口袋可以提高器件的整体性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Meeting for Future of Electron Devices, Kansai

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