MEMS microphones on InP substrates for high performance digital ultrasonic sensors

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602256

S. Fujino, Yuta Mizuno, K. Takaoka, M. Mori, K. Maezawa

引用次数: 0

Abstract

This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone ashing of the photoresist to fabricate a hollow structure. This process was demonstrated to be damage-free, and suitable for integration with HEMTs.

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用于高性能数字超声传感器的InP基板MEMS麦克风

本文介绍了在InP衬底上制造MEMS传声器的工艺。该工艺是基于臭氧灰化光刻胶来制造空心结构。该工艺被证明是无损伤的，适合与hemt集成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Meeting for Future of Electron Devices, Kansai

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