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2013 IEEE International Meeting for Future of Electron Devices, Kansai最新文献

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A 13.56 MHz wireless power transmission systems with enhancement-mode GaN high electron mobility transistors 一种13.56 MHz无线电力传输系统与增强型氮化镓高电子迁移率晶体管
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602268
Yusuke Nakakohara, J. Kashiwagi, T. Fujiwara, Minoru Akutsu, Norikazu Ito, K. Chikamatsu, Astushi Yamaguchi, K. Nakahara
{"title":"A 13.56 MHz wireless power transmission systems with enhancement-mode GaN high electron mobility transistors","authors":"Yusuke Nakakohara, J. Kashiwagi, T. Fujiwara, Minoru Akutsu, Norikazu Ito, K. Chikamatsu, Astushi Yamaguchi, K. Nakahara","doi":"10.1109/IMFEDK.2013.6602268","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602268","url":null,"abstract":"Enhancement-mode GaN-HEMT devices with a newly developed recessed-gate structure were fabricated. These devices were capable of operating at up to 30 MHz switching. A wireless power transmission (WPT) was adopted for a potential application of these GaN devices, because high-frequency (f) switching devices are expected to improve the power-transfer efficiency (η) of the WPT. A GaN-based E-class amplifier WPT system achieved 10W output power and η =63.5 % under the operating conditions of f =13.56 MHz, duty=50%, and a load resistance of 10Ω.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127051763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low voltage high linearity CMOS up-conversion mixer for LTE applications 用于LTE应用的低电压高线性CMOS上转换混频器
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602232
Yuan-Hao Shu, Jeng-Rern Yang
{"title":"Low voltage high linearity CMOS up-conversion mixer for LTE applications","authors":"Yuan-Hao Shu, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2013.6602232","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602232","url":null,"abstract":"The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127564640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Retinal prosthesis of frequency modulation using thin-film photo transistors 用薄膜光电晶体管调制视网膜假体
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602247
T. Kadonome, A. Matsumura, T. Higashiyama, S. Oyama, M. Kimura
{"title":"Retinal prosthesis of frequency modulation using thin-film photo transistors","authors":"T. Kadonome, A. Matsumura, T. Higashiyama, S. Oyama, M. Kimura","doi":"10.1109/IMFEDK.2013.6602247","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602247","url":null,"abstract":"Retinal prostheses have been ardently desired to recover the sight sense for sight-handicapped people. In our study, we have proposed an retinal prosthesis using poly-Si thin-film transistors. Particularly in this presentation, we will report a retinal prosthesis of frequency modulation, which is preferable to interconnect neuron cells because the neuron cells transfer the signal by frequency modulation.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127810449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical analysis of light-trapping structure in nanoimprinted-textured silicon solar cell 纳米压印纹理硅太阳能电池光捕获结构的数值分析
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602223
S. Yoshinaga, Y. Ishikawa, S. Araki, Y. Uraoka
{"title":"Numerical analysis of light-trapping structure in nanoimprinted-textured silicon solar cell","authors":"S. Yoshinaga, Y. Ishikawa, S. Araki, Y. Uraoka","doi":"10.1109/IMFEDK.2013.6602223","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602223","url":null,"abstract":"We calculated the light trapping effect of nanoimprinted-textured (NT) structure for monocrystalline silicon solar cell using 2-dimentional simulator. Our calculation revealed that the 10 μm width for textured pyramid, in the case of ZnO used as a NT material, produced lower efficiency than the cell without NT structure, due to the light absorbance in the ZnO layer in short length region. On the other hand, ZrO2-NT cell performance showed the highest efficiency of 23 %. In addition, we found the optimized texture width was 0.25 μm for both materials.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121189914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of low ohmic contacts to AlGaN/GaN heterostructures using Ti/Al-based metal stack 利用Ti/ al基金属堆形成AlGaN/GaN异质结构的低欧姆接触
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602238
R. Maeta, H. Tokuda, M. Kuzuhara
{"title":"Formation of low ohmic contacts to AlGaN/GaN heterostructures using Ti/Al-based metal stack","authors":"R. Maeta, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602238","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602238","url":null,"abstract":"In this paper, we describe the dependence of ohmic contact resistance on annealing temperature in AlGaN/GaN heterostructures with ohmic metal stacks of Ti/Al/Ni/Au and Ti/Al/Mo/Au. A minimum ohmic contact resistance of 0.28 Ωmm was attained for Ti/Al/Mo/Au by annealing at 850°C, while that of 0.44 Ωmm was obtained for Ti/Al/Ni/Au by annealing at 900°C. The surface morphology after annealing was much better for Ti/Al/Mo/Au, indicating that Ti/Al/Mo/Au is a better choice for an ohmic contact metal in AlGaN/GaN heterostructures.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114888163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery 面向医疗植入应用的XCT-SOI MOSFET的缩放方案展望
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602230
Daiki Sato, Y. Omura
{"title":"Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery","authors":"Daiki Sato, Y. Omura","doi":"10.1109/IMFEDK.2013.6602230","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602230","url":null,"abstract":"This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115951740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Femtosecond laser irradiation to ZnS phosphor for inorganic electroluminescent displays 无机电致发光显示器用ZnS荧光粉的飞秒激光辐照
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602272
K. Nabesaka, Y. Ishikawa, T. Doe, N. Taguchi, Y. Hosokawa, Y. Uraoka
{"title":"Femtosecond laser irradiation to ZnS phosphor for inorganic electroluminescent displays","authors":"K. Nabesaka, Y. Ishikawa, T. Doe, N. Taguchi, Y. Hosokawa, Y. Uraoka","doi":"10.1109/IMFEDK.2013.6602272","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602272","url":null,"abstract":"We investigated the impact of atomization treatment by Femto-second laser to improve the luminance properties of distributed-type ZnS inorganic EL devices. The luminance intensity of EL devices with the phosphor irradiated for the some conditions has become five times higher than that with the original phosphor.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126017573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of high-transmittance zinc oxide by oxidation of evaporated zinc films 蒸发锌膜氧化法合成高透光率氧化锌
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602255
Jiesheng Zhang, K. Iwamaru, Kazuhiro Nakamura
{"title":"Synthesis of high-transmittance zinc oxide by oxidation of evaporated zinc films","authors":"Jiesheng Zhang, K. Iwamaru, Kazuhiro Nakamura","doi":"10.1109/IMFEDK.2013.6602255","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602255","url":null,"abstract":"ZnO films were prepared on glass substrates by two different methods. One is a spin-coating method followed by annealing in oxygen gas. The other is an evaporation of zinc metal followed by oxidation. The crystal structure was characterized by X-ray diffraction. The optical transmittance was recorded by a spectrophotometer in the visible range (400-800nm). It was found that the normalized optical transmittances of the ZnO films prepared using vacuum evaporation method were over 90% which were much larger than those of the films using spin-coating method.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134458312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Power-noise measurements of small-scale inverter chains 小型逆变器链的功率噪声测量
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602259
Yuji Harada, K. Yoshikawa, N. Miura, M. Nagata, Akitaka Murata, Syuji Agatsuma, K. Ichikawa
{"title":"Power-noise measurements of small-scale inverter chains","authors":"Yuji Harada, K. Yoshikawa, N. Miura, M. Nagata, Akitaka Murata, Syuji Agatsuma, K. Ichikawa","doi":"10.1109/IMFEDK.2013.6602259","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602259","url":null,"abstract":"This paper presents the measurements of power noise (Vdd noise) waveforms of a 5-stage inverter chain, using on-chip noise monitor circuits (OCM). The fine resolution of 0.4 mV in voltage and 12.5 ps in timing are realized. The undesired voltage variation by signal buffers in I/O cells is carefully eliminated by three means; (i) isolation of power domains, (ii) subtraction of background noise waveforms, and (iii) averaging iteratively captured waveforms.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123524824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Expansion of SRAM operation margin by adaptive voltage supply 自适应电压供电扩展SRAM工作余量
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602260
Kyohei Kishida, T. Tsujii, H. Makino, T. Yoshimura, S. Iwade, Y. Matsuda
{"title":"Expansion of SRAM operation margin by adaptive voltage supply","authors":"Kyohei Kishida, T. Tsujii, H. Makino, T. Yoshimura, S. Iwade, Y. Matsuda","doi":"10.1109/IMFEDK.2013.6602260","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602260","url":null,"abstract":"This paper describes the expansion of the operation margin of the SRAM by optimizing the supply voltage condition. To find the optimum voltage, the whole SRAM circuit is designed, which includes the worst case memory cells for the read and the write operations considering the local Vth fluctuation. By the SPICE simulation using 45-nm parameters, successful operation is obtained for wide Vth range by controlling voltages of the word line, the power line and the GND line of memory cells. As a result, the stable operation was confirmed for the wide Vth range of 0.25V-0.65V. By using these results, we can rescue a lot of LSIs which fail under the normal voltage condition.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"62 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127393357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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