{"title":"Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery","authors":"Daiki Sato, Y. Omura","doi":"10.1109/IMFEDK.2013.6602230","DOIUrl":null,"url":null,"abstract":"This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.