用于LTE应用的低电压高线性CMOS上转换混频器

Yuan-Hao Shu, Jeng-Rern Yang
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引用次数: 7

摘要

本研究的目的是利用0.18 μm 1P6M标准CMOS工艺,在Gilbert细胞混频器的基础上制作一个混频器。该混频器的主要目标是长期演进(LTE)小蜂窝基站;因此,高线性是必不可少的。这种上转换混频器可以将100 mhz的中频转换为更高的1.8 ghz射频,用于无线应用。采用导数叠加(DS)方法和源退化电阻实现了高线性混频器,同时采用折叠混频器实现了低电压。布局后仿真结果为转换增益为5 dB,输入三阶截距(IIP3)为14.6 dBm,电源电压为1.2 V,功耗为9.54 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low voltage high linearity CMOS up-conversion mixer for LTE applications
The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.
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