{"title":"用于LTE应用的低电压高线性CMOS上转换混频器","authors":"Yuan-Hao Shu, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2013.6602232","DOIUrl":null,"url":null,"abstract":"The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low voltage high linearity CMOS up-conversion mixer for LTE applications\",\"authors\":\"Yuan-Hao Shu, Jeng-Rern Yang\",\"doi\":\"10.1109/IMFEDK.2013.6602232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602232\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low voltage high linearity CMOS up-conversion mixer for LTE applications
The purpose of this study was to fabricate a mixer based on the Gilbert cell mixer using the 0.18 μm 1P6M standard CMOS process. The primary target of this mixer was long-term evolution (LTE) small-cell base stations; thus, high linearity was essential. This up-conversion mixer can convert a 100-MHz intermediate frequency into a higher 1.8-GHz radio frequency for wireless applications. A high-linearity mixer was achieved by employing the derivative superposition (DS) method and a source degeneration resistor, while using a folded mixer to achieve low voltages. The post-layout simulation result was a conversion gain of 5 dB, an input third-order intercept point (IIP3) of 14.6 dBm, supply voltage of 1.2 V, and a power consumption of 9.54 mW.