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2013 IEEE International Meeting for Future of Electron Devices, Kansai最新文献

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Distance controlled nanoparticles using PEG-ferritin for new functional devices 使用聚乙二醇铁蛋白的距离控制纳米颗粒的新功能装置
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602224
Chaobin He, R. Honda, H. Kamitake, M. Uenuma, Y. Ishikawa, I. Yamashita, Y. Uraoka
{"title":"Distance controlled nanoparticles using PEG-ferritin for new functional devices","authors":"Chaobin He, R. Honda, H. Kamitake, M. Uenuma, Y. Ishikawa, I. Yamashita, Y. Uraoka","doi":"10.1109/IMFEDK.2013.6602224","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602224","url":null,"abstract":"PEGylated ferritins are used to deliver nanoparticles (NPs). It was found the separation distances of PEGylated ferritins could be controlled through ammonium acetate concentration. This method could be used to produce new functional devices with controlled inter-distances of NPs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116997991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of photoluminescence due to one-dimensional photonic crystal 一维光子晶体对光致发光的增强作用
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602245
Kohei Shobudani, M. Morifuji
{"title":"Enhancement of photoluminescence due to one-dimensional photonic crystal","authors":"Kohei Shobudani, M. Morifuji","doi":"10.1109/IMFEDK.2013.6602245","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602245","url":null,"abstract":"We report on interplay between photonic crystal and photoluminescence in a one-dimensional photonic crystal. The one-dimensional photonic crystal reflects light within a certain range of wavelength. This range of wavelength is called photonic band gap. We measured reflectivity by changing incident angle of probe light, so as to shift the region of large reflectivity. We found that photoluminescence is observed only when PL wavelength falls in the photonic band gap. This result indicates that PL is intensified due to photonic crystal.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124364372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel solar cell with MOS diode for improvement of conversion efficiency 采用MOS二极管的新型太阳能电池，提高了转换效率
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602231
T. Kobayashi, N. Matsuo, A. Heya
{"title":"Novel solar cell with MOS diode for improvement of conversion efficiency","authors":"T. Kobayashi, N. Matsuo, A. Heya","doi":"10.1109/IMFEDK.2013.6602231","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602231","url":null,"abstract":"We presented the novel structure of the solar cell that has the metal oxide semiconductor (MOS) diode at the side wall of the electricity generation layer. The purpose of this research is to simulate influence of the field-effect on the recombination of carriers and show the increase of the conversion efficiency of the solar cell. The increase ratios of the conversion efficiency under the gate voltage application are 1.62 and 1.56 times for c-Si and p-Si in comparison with non-gate application equal to the conventional structure, respectively.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133050088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characterization of AlGaN/GaN HEMTs fabricated on CF4-plasma-treated AlGaN surface 在cf4等离子体处理的AlGaN表面制备的AlGaN/GaN hemt的电学特性
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602239
Y. Sakaida, H. Tokuda, M. Kuzuhara
{"title":"Electrical characterization of AlGaN/GaN HEMTs fabricated on CF4-plasma-treated AlGaN surface","authors":"Y. Sakaida, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602239","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602239","url":null,"abstract":"In this work, we have studied the mechanism of the threshold voltage shift for AlGaN/GaN HEMTs by exposing the AlGaN surface to CF4 plasma. The CF4 plasma treatment on AlGaN/GaN heterostructures resulted in the decrease in two-dimensional electron gas density. Careful observation on the AlGaN surface indicated that the AlGaN surface was slightly etched after CF4 plasma exposure. The rate of ns decrease was much larger than that calculated by assuming surface AlGaN etching, indicating that the threshold voltage of the AlGaN/GaN heterostructure was also shifted by the effects of F ion implantation into the AlGaN surface layer.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122209573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of supply voltage reduction to 5.8-GHz differential dual-modulus prescaler 电源电压降低对5.8 ghz差分双模预分频器的影响
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602226
T. Mitsunaka, Masafumi Yamanoue, K. Iizuka, M. Fujishima
{"title":"The effect of supply voltage reduction to 5.8-GHz differential dual-modulus prescaler","authors":"T. Mitsunaka, Masafumi Yamanoue, K. Iizuka, M. Fujishima","doi":"10.1109/IMFEDK.2013.6602226","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602226","url":null,"abstract":"We have measured the noise floor of spectrum and phase noise of the proposed differential dual-modulus 10/11 prescaler based on ILFD for various supply voltages and found that spurious noises arise and the phase noise degrades as the supply voltage reduces. The differential dual-modulus prescaler is implemented in 130 nm CMOS process and the core size is 40 × 20 μm2.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114944386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel discharge-induced airflow device with low voltage operation 一种新型低压操作的放电诱导气流装置
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602275
T. Furuhi, M. Inoue, K. Takagi, A. Ando
{"title":"A novel discharge-induced airflow device with low voltage operation","authors":"T. Furuhi, M. Inoue, K. Takagi, A. Ando","doi":"10.1109/IMFEDK.2013.6602275","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602275","url":null,"abstract":"A novel low-voltage-operation method to yield surface airflow with electrohydrodynamic (EHD) force is proposed. The experimental results show (1) airflow near the device surface, (2) purple glow by surface discharge, and (3) instant transfer of electric charge among three linear electrodes where the supplied voltages generate strong electric field. The velocity of airflow is 2.0m/s at maximum. The observed charge transfer among the electrodes can be explained to correspond to formation of “wall charge” above the device surface. This fact indicates that the airflow is induced by EHD force based on discharged particle, asymmetric distribution of wall charge, and strong electric field in the vicinity of the device surface.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122486720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of temperature dependence and lifetime of 79GHz power amplifier 79GHz功率放大器的温度依赖性和寿命评估
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602258
C. Li, T. Yoshida, K. Katayama, M. Motoyoshi, K. Takano, S. Amakawa, M. Fujishima
{"title":"Evaluation of temperature dependence and lifetime of 79GHz power amplifier","authors":"C. Li, T. Yoshida, K. Katayama, M. Motoyoshi, K. Takano, S. Amakawa, M. Fujishima","doi":"10.1109/IMFEDK.2013.6602258","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602258","url":null,"abstract":"A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122835973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Evolution of Power Amplifier for mobile applications 移动应用功率放大器的发展
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602264
Satoshi Tanaka
{"title":"Evolution of Power Amplifier for mobile applications","authors":"Satoshi Tanaka","doi":"10.1109/IMFEDK.2013.6602264","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602264","url":null,"abstract":"With strong requirements for current reduction for a longer battery life and higher linearity for high-speed data communication, progress of power amplifiers for mobile phone applications is becoming significant. This paper reviews recent progress in PA designs.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133367807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monte carlo simulation of seebeck coefficient of Si nanostructure with barrier layers 具有势垒层的硅纳米结构塞贝克系数的蒙特卡罗模拟
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602229
I. N. Adisusilo, K. Kukita, Y. Kamakura
{"title":"Monte carlo simulation of seebeck coefficient of Si nanostructure with barrier layers","authors":"I. N. Adisusilo, K. Kukita, Y. Kamakura","doi":"10.1109/IMFEDK.2013.6602229","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602229","url":null,"abstract":"We numerically investigate the thermoelectric properties of Si nanostructures using Monte Carlo method coupled with one-dimensional Poisson equation. It is demonstrated that the barrier structure give rise to more pronounced electromotive force. This is probably because the barriers only allowing high energy electrons to pass through, which results in so-called energy filtering effect.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131546103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of electrode configuration on bio-impedance measurements 电极结构对生物阻抗测量的影响
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602252
Leo Kawamura, Takahiro Ohnishi, Y. Omura
{"title":"Impact of electrode configuration on bio-impedance measurements","authors":"Leo Kawamura, Takahiro Ohnishi, Y. Omura","doi":"10.1109/IMFEDK.2013.6602252","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602252","url":null,"abstract":"This paper introduces an advanced electrode configuration for bio-impedance measurements. The electrode consists of four short isolated spikes. Usefulness of the spikes in measuring the high-frequency components of bio-impedance is demonstrated.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124862732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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