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2013 IEEE International Meeting for Future of Electron Devices, Kansai最新文献

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Forming of SiO2 film by spin-on glass and CO2 laser annealing for gate insulator of polycrystalline silicon thin film transistors 多晶硅薄膜晶体管栅极绝缘子用自旋玻璃和CO2激光退火制备SiO2薄膜
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602271
Daisuke Hishitani, M. Horita, Y. Ishikawa, H. Ikenoue, Yosuke Watanabe, Y. Uraoka
{"title":"Forming of SiO2 film by spin-on glass and CO2 laser annealing for gate insulator of polycrystalline silicon thin film transistors","authors":"Daisuke Hishitani, M. Horita, Y. Ishikawa, H. Ikenoue, Yosuke Watanabe, Y. Uraoka","doi":"10.1109/IMFEDK.2013.6602271","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602271","url":null,"abstract":"CO<sub>2</sub> laser was irradiated to per-hydro-polysilazane by us. Per-hydro-polysilazane as SiO<sub>2</sub> precursor was spin-coated on the polycrystalline silicon substrate. CO<sub>2</sub> laser was irradiated after prebaking Per-hydro-polysilazane film. Atomic force microscope analysis showed that the film after CO<sub>2</sub> laser irradiation was formed flatly. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis showed that uniform SiO<sub>2</sub> film in the depth direction was obtained by CO<sub>2</sub> Laser Annealing compared with conventional furnace annealing.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122120975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Type II band lineup in SAB-Based GaAs/Si heterojunctions 基于sab的GaAs/Si异质结中的II型带阵
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602234
M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa
{"title":"Type II band lineup in SAB-Based GaAs/Si heterojunctions","authors":"M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa","doi":"10.1109/IMFEDK.2013.6602234","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602234","url":null,"abstract":"The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115484186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low resistance ohmic contacts to n-InSb employing Sn-alloys 采用sn合金与n-InSb的低电阻欧姆接触
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602246
K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa
{"title":"Low resistance ohmic contacts to n-InSb employing Sn-alloys","authors":"K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2013.6602246","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602246","url":null,"abstract":"This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without anomalous alloy extension.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126760534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures 在AlGaN/GaN异质结构上制造的横向隧道结的电学特性
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602242
Y. Kobayashi, T. Saito, H. Tokuda, M. Kuzuhara
{"title":"Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures","authors":"Y. Kobayashi, T. Saito, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602242","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602242","url":null,"abstract":"This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125705904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Curvature controlled microstructures for improved triaxial sensitivity in piezoelectric vibratory cantilever-type tactile sensors based on resonant frequency shift 基于谐振频移的压电振动悬臂式触觉传感器曲率控制微结构提高三轴灵敏度
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602254
Hikaru Tanaka, Hirotoshi Kii, Yi Yang, K. Yamashita, M. Noda
{"title":"Curvature controlled microstructures for improved triaxial sensitivity in piezoelectric vibratory cantilever-type tactile sensors based on resonant frequency shift","authors":"Hikaru Tanaka, Hirotoshi Kii, Yi Yang, K. Yamashita, M. Noda","doi":"10.1109/IMFEDK.2013.6602254","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602254","url":null,"abstract":"A simplified curved structure of vibratory cantilevers has been designed and fabricated for precision improvement of triaxial tactile sensing. While the previously developed cantilever had two vibratory parts, the new one has one vibratory part and a compact hook with a small curvature radius. In tactile sensing simulation, the new structure has been expected to reduce the tactile estimation error down to 5.7%, less than a half of that of the previous one. Fabrication condition and process have been developed for the new structure having two different curvatures through optimizations of thermal treatment of the layers in the cantilever. Fabricated structure has shown the suitable curvature combination.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122161030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of SiC power devices and modules for automotive motor drive use 开发用于汽车电机驱动的SiC功率器件和模块
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602266
Tristan M. Evans, T. Hanada, Y. Nakano, Takashi Nakamura
{"title":"Development of SiC power devices and modules for automotive motor drive use","authors":"Tristan M. Evans, T. Hanada, Y. Nakano, Takashi Nakamura","doi":"10.1109/IMFEDK.2013.6602266","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602266","url":null,"abstract":"SiC Power devices are expected to greatly improve the efficiencies and operating capabilities of next generation electric and hybrid electric vehicles. The use of these devices allows for drastic size and weight reduction at the module and system levels of motor drives used in automotive applications. A new SiC MOSFET structure with both gate and source trenches is presented. This greatly reduces device on-resistance while preventing oxide destruction at the gate trench bottoms. Finally new packaging methods under development are outlined that take advantage of the benefits these new devices have to offer by transfer molding them in a high temperature resistant epoxy resin. This leads to modules with low thermal resistance and high power density that, when configured as a three phase inverter, reduce total system footprint and parasitic inductance.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130806351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Keynote speeches [2 full artcile presentations] 主题演讲[2篇全文演示]
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602219
M. Kuzuhara
{"title":"Keynote speeches [2 full artcile presentations]","authors":"M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602219","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602219","url":null,"abstract":"Presents the full-length article \"Low Energy Silicon Solution toward Smart and Sustainable Society\" by Toshiaki Masuhara. The abstract follows: Low-voltage technology solutions for future IT systems are discussed. New SOTB CMOS transistors with small variation for Vth and Ion, new non-volatile memories for cache and data storage, atom switch for logic reconfiguration, and new carbon interconnect are discussed. Also presents the article \"Low-Power Ultrahigh-Speed Wireless Communication with Short-Millimeter-Wave CMOS Technology\" by Minoru Fujishima. The abstract follows: Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D-band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize lowpower ultrahigh-speed wireless communication. In the D-band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133535140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
V/Al-based ohmic contact formation to n-GaN using low temperature annealing 低温退火形成V/ al基n-GaN欧姆接触
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602235
K. Tone, H. Tokuda, M. Kuzuhara
{"title":"V/Al-based ohmic contact formation to n-GaN using low temperature annealing","authors":"K. Tone, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602235","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602235","url":null,"abstract":"We describe the dependence of annealing temperature on the ohmic contact resistance for n-type GaN layers having ohmic metal stacks of V/Al/Mo/Au and Ti/Al/Mo/Au. Measurement results indicated that the contact resistance for V/Al/Mo/Au with a doping level of 2×1018 cm-3 was 0.35 Ωmm after annealing at 600 °C, while that for Ti/Al/Mo/Au did not show good ohmic behaviors after annealing below 650 °C. These results indicate that V/Al/Mo/Au is a good alternative to Ti/Al/Mo/Au and is suited for low-temperature annealing. Interdiffusion of metals during annealing studied by Auger electron spectroscopy will be also discussed.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114255038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of zinc oxide thin film transistors using a facing-targets sputtering method 用面靶溅射法制备氧化锌薄膜晶体管
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602241
Y. Okada, R. Morita, K. Ogata, K. Koike, T. Maemoto, M. Yano, S. Sasa
{"title":"Fabrication of zinc oxide thin film transistors using a facing-targets sputtering method","authors":"Y. Okada, R. Morita, K. Ogata, K. Koike, T. Maemoto, M. Yano, S. Sasa","doi":"10.1109/IMFEDK.2013.6602241","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602241","url":null,"abstract":"IZO thin-film transistors fabricated using facing targets sputtering and a heat treatment at 400°C showed a very high transconductance as high as 91 mS/mm.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115722201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A CMOS image sensor with low fixed pattern noise suitable for lensless observation system of digital enzyme-linked immunosorbent assay (ELISA) 适用于数字酶联免疫吸附试验(ELISA)无透镜观测系统的低固定模式噪声CMOS图像传感器
2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI: 10.1109/IMFEDK.2013.6602227
H. Takehara, K. Miyazawa, T. Noda, K. Sasagawa, T. Tokuda, Soo Hyeon Kim, R. Iino, H. Noji, J. Ohta
{"title":"A CMOS image sensor with low fixed pattern noise suitable for lensless observation system of digital enzyme-linked immunosorbent assay (ELISA)","authors":"H. Takehara, K. Miyazawa, T. Noda, K. Sasagawa, T. Tokuda, Soo Hyeon Kim, R. Iino, H. Noji, J. Ohta","doi":"10.1109/IMFEDK.2013.6602227","DOIUrl":"https://doi.org/10.1109/IMFEDK.2013.6602227","url":null,"abstract":"Digital enzyme-linked immunosorbent assay (ELISA) systems can be miniaturized by applying on-chip CMOS image sensor detection instead of conventional fluorescence microscopy. We have developed a CMOS image sensor dedicated to digital ELISA, which is sensitive to small changes of fluorescent intensity.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117179437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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