采用sn合金与n-InSb的低电阻欧姆接触

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602246

K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa

{"title":"采用sn合金与n-InSb的低电阻欧姆接触","authors":"K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa","doi":"10.1109/IMFEDK.2013.6602246","DOIUrl":null,"url":null,"abstract":"This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without anomalous alloy extension.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low resistance ohmic contacts to n-InSb employing Sn-alloys\",\"authors\":\"K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa\",\"doi\":\"10.1109/IMFEDK.2013.6602246\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without anomalous alloy extension.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602246\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文讨论了sn基合金在n-InSb表面的欧姆接触形成。在使用Sn/Au/Ni/Ti/Au金属堆时，我们遇到的最关键的问题是欧姆金属的异常合金延伸。这是由于Au的快速扩散造成的。结果表明，去除Ti阻挡层下的Au可以获得小于0.1 Ωmm的良好接触电阻，而不会出现合金的异常延伸。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low resistance ohmic contacts to n-InSb employing Sn-alloys

This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from rapid diffusion of Au. It is demonstrated that by removing the Au under the Ti barrier layer good contact resistance of less than 0.1 Ωmm can be obtained without anomalous alloy extension.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Meeting for Future of Electron Devices, Kansai

自引率

0.00%

发文量