用面靶溅射法制备氧化锌薄膜晶体管

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602241

Y. Okada, R. Morita, K. Ogata, K. Koike, T. Maemoto, M. Yano, S. Sasa

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引用次数: 1

摘要

采用面向目标溅射和400°C热处理制备的IZO薄膜晶体管具有很高的跨导性，高达91 mS/mm。

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Fabrication of zinc oxide thin film transistors using a facing-targets sputtering method

IZO thin-film transistors fabricated using facing targets sputtering and a heat treatment at 400°C showed a very high transconductance as high as 91 mS/mm.

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来源期刊

2013 IEEE International Meeting for Future of Electron Devices, Kansai

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