{"title":"主题演讲[2篇全文演示]","authors":"M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602219","DOIUrl":null,"url":null,"abstract":"Presents the full-length article \"Low Energy Silicon Solution toward Smart and Sustainable Society\" by Toshiaki Masuhara. The abstract follows: Low-voltage technology solutions for future IT systems are discussed. New SOTB CMOS transistors with small variation for Vth and Ion, new non-volatile memories for cache and data storage, atom switch for logic reconfiguration, and new carbon interconnect are discussed. Also presents the article \"Low-Power Ultrahigh-Speed Wireless Communication with Short-Millimeter-Wave CMOS Technology\" by Minoru Fujishima. The abstract follows: Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D-band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize lowpower ultrahigh-speed wireless communication. In the D-band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Keynote speeches [2 full artcile presentations]\",\"authors\":\"M. Kuzuhara\",\"doi\":\"10.1109/IMFEDK.2013.6602219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presents the full-length article \\\"Low Energy Silicon Solution toward Smart and Sustainable Society\\\" by Toshiaki Masuhara. The abstract follows: Low-voltage technology solutions for future IT systems are discussed. New SOTB CMOS transistors with small variation for Vth and Ion, new non-volatile memories for cache and data storage, atom switch for logic reconfiguration, and new carbon interconnect are discussed. Also presents the article \\\"Low-Power Ultrahigh-Speed Wireless Communication with Short-Millimeter-Wave CMOS Technology\\\" by Minoru Fujishima. The abstract follows: Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D-band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize lowpower ultrahigh-speed wireless communication. In the D-band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Presents the full-length article "Low Energy Silicon Solution toward Smart and Sustainable Society" by Toshiaki Masuhara. The abstract follows: Low-voltage technology solutions for future IT systems are discussed. New SOTB CMOS transistors with small variation for Vth and Ion, new non-volatile memories for cache and data storage, atom switch for logic reconfiguration, and new carbon interconnect are discussed. Also presents the article "Low-Power Ultrahigh-Speed Wireless Communication with Short-Millimeter-Wave CMOS Technology" by Minoru Fujishima. The abstract follows: Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application D-band (110-170 GHz) is promising since it can potentially provide a wider frequency band. Thus, we have studied D-band CMOS circuits to realize lowpower ultrahigh-speed wireless communication. In the D-band, however, since no sufficient device model is provided, research generally has to start from device modeling. In this paper, a 10 Gbps wireless transceiver with a power consumption of 98 mW is demonstrated using the 135 GHz band, where the architecture is optimized to realize both low power and high data transfer rate.