M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa
{"title":"基于sab的GaAs/Si异质结中的II型带阵","authors":"M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa","doi":"10.1109/IMFEDK.2013.6602234","DOIUrl":null,"url":null,"abstract":"The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Type II band lineup in SAB-Based GaAs/Si heterojunctions\",\"authors\":\"M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa\",\"doi\":\"10.1109/IMFEDK.2013.6602234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Type II band lineup in SAB-Based GaAs/Si heterojunctions
The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.
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