Type II band lineup in SAB-Based GaAs/Si heterojunctions

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602234

M. Morimoto, J. Liang, S. Nishida, T. Miyazaki, N. Shigekawa

引用次数: 0

Abstract

The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.

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基于sab的GaAs/Si异质结中的II型带阵

实验研究了表面活化键合制备的GaAs/Si异质结的电学性能。测量结果表明，异质结构呈ii型能带排列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Meeting for Future of Electron Devices, Kansai

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