{"title":"在AlGaN/GaN异质结构上制造的横向隧道结的电学特性","authors":"Y. Kobayashi, T. Saito, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2013.6602242","DOIUrl":null,"url":null,"abstract":"This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures\",\"authors\":\"Y. Kobayashi, T. Saito, H. Tokuda, M. Kuzuhara\",\"doi\":\"10.1109/IMFEDK.2013.6602242\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602242\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical charaterization of lateral tunnel junctions fabricated on AlGaN/GaN heterostructures
This paper describes electrical characteristics of lateral tunnel diodes fabricated on an AlGaN/GaN heterostructure. Our lateral tunnel diode consists of a recessed Schottky source, in contact with the two-dimensional electron gas, and a non-recessed ohmic drain. We have fabricated three different device structures to study the current path. By analyzing conduction current components, we have achieved good tunnel junctions having lateral Schottky electrodes directly contacting to the GaN channel layer with 2DEG.
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