Forming of SiO2 film by spin-on glass and CO2 laser annealing for gate insulator of polycrystalline silicon thin film transistors

Abstract

CO₂ laser was irradiated to per-hydro-polysilazane by us. Per-hydro-polysilazane as SiO₂ precursor was spin-coated on the polycrystalline silicon substrate. CO₂ laser was irradiated after prebaking Per-hydro-polysilazane film. Atomic force microscope analysis showed that the film after CO₂ laser irradiation was formed flatly. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis showed that uniform SiO₂ film in the depth direction was obtained by CO₂ Laser Annealing compared with conventional furnace annealing.