C. Li, T. Yoshida, K. Katayama, M. Motoyoshi, K. Takano, S. Amakawa, M. Fujishima
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Evaluation of temperature dependence and lifetime of 79GHz power amplifier
A 79 GHz power amplifier (PA) using 4-stages common-source structure is presented in this paper. To evaluate temperature dependence of circuit characteristics, the PA is measured at various temperatures. At room temperature (RT) and 100°C, the saturated output power is 7.6 and 7.1dBm, the maximum PAE is 6.2% and 4.9%, respectively. The reliability and lifetime of PA is also obtained. To the author's knowledge, this is the first paper to show the lifetime results of PA at two different biases in 40nm CMOS process.
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