{"title":"具有势垒层的硅纳米结构塞贝克系数的蒙特卡罗模拟","authors":"I. N. Adisusilo, K. Kukita, Y. Kamakura","doi":"10.1109/IMFEDK.2013.6602229","DOIUrl":null,"url":null,"abstract":"We numerically investigate the thermoelectric properties of Si nanostructures using Monte Carlo method coupled with one-dimensional Poisson equation. It is demonstrated that the barrier structure give rise to more pronounced electromotive force. This is probably because the barriers only allowing high energy electrons to pass through, which results in so-called energy filtering effect.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Monte carlo simulation of seebeck coefficient of Si nanostructure with barrier layers\",\"authors\":\"I. N. Adisusilo, K. Kukita, Y. Kamakura\",\"doi\":\"10.1109/IMFEDK.2013.6602229\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We numerically investigate the thermoelectric properties of Si nanostructures using Monte Carlo method coupled with one-dimensional Poisson equation. It is demonstrated that the barrier structure give rise to more pronounced electromotive force. This is probably because the barriers only allowing high energy electrons to pass through, which results in so-called energy filtering effect.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"90 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602229\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte carlo simulation of seebeck coefficient of Si nanostructure with barrier layers
We numerically investigate the thermoelectric properties of Si nanostructures using Monte Carlo method coupled with one-dimensional Poisson equation. It is demonstrated that the barrier structure give rise to more pronounced electromotive force. This is probably because the barriers only allowing high energy electrons to pass through, which results in so-called energy filtering effect.