{"title":"面向医疗植入应用的XCT-SOI MOSFET的缩放方案展望","authors":"Daiki Sato, Y. Omura","doi":"10.1109/IMFEDK.2013.6602230","DOIUrl":null,"url":null,"abstract":"This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery\",\"authors\":\"Daiki Sato, Y. Omura\",\"doi\":\"10.1109/IMFEDK.2013.6602230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Scaling scheme prospect of XCT-SOI MOSFET aiming at medical implant applications showing long lifetime with a small battery
This paper uses three-dimensional device simulations to consider the viability of XCT-CMOS devices in the sub-30-nm-regime. It is demonstrated that 20-nm XCT-SOI CMOS devices can support low-energy circuit applications.
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