Yusuke Nakakohara, J. Kashiwagi, T. Fujiwara, Minoru Akutsu, Norikazu Ito, K. Chikamatsu, Astushi Yamaguchi, K. Nakahara
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引用次数: 1
摘要
制备了一种新型凹槽栅结构的增强型GaN-HEMT器件。这些设备能够在高达30兆赫的切换下工作。无线功率传输(WPT)被用于这些GaN器件的潜在应用，因为高频(f)开关器件有望提高WPT的功率传输效率(η)。基于氮化镓的e级放大器WPT系统在f =13.56 MHz、占空率=50%、负载电阻为10Ω的工作条件下，输出功率为10W， η = 63.5%。
A 13.56 MHz wireless power transmission systems with enhancement-mode GaN high electron mobility transistors
Enhancement-mode GaN-HEMT devices with a newly developed recessed-gate structure were fabricated. These devices were capable of operating at up to 30 MHz switching. A wireless power transmission (WPT) was adopted for a potential application of these GaN devices, because high-frequency (f) switching devices are expected to improve the power-transfer efficiency (η) of the WPT. A GaN-based E-class amplifier WPT system achieved 10W output power and η =63.5 % under the operating conditions of f =13.56 MHz, duty=50%, and a load resistance of 10Ω.
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