Atmospheric pressure processed InGaZnO thin-film transistors

Abstract

High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.