H. Kawahara, Naoya Tahara, Shuhei Nomura, K. Yamashita, M. Noda, H. Uchida, H. Funakubo
{"title":"具有优异电稳定性的新型SrBi4Ti4O15/CaBi4Ti4O15薄膜电容器的漏电流特性","authors":"H. Kawahara, Naoya Tahara, Shuhei Nomura, K. Yamashita, M. Noda, H. Uchida, H. Funakubo","doi":"10.1109/IMFEDK.2013.6602250","DOIUrl":null,"url":null,"abstract":"SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability\",\"authors\":\"H. Kawahara, Naoya Tahara, Shuhei Nomura, K. Yamashita, M. Noda, H. Uchida, H. Funakubo\",\"doi\":\"10.1109/IMFEDK.2013.6602250\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602250\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Leakage current characteristics of new SrBi4Ti4O15/CaBi4Ti4O15 thin-film capacitor with excellent electric stability
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are examined as stacked-type dielectric capacitors for realizing excellent electric stability in capacitor device. It is revealed that the leakage current of the SBTi and CBTi is composed mainly from Schottky current for medium electric field range (about 100-350 kV/cm). The current is smaller by three order of magnitude than the BST single perovskite film, even with thinner thickness in the SBTi film. This indicates that the SBTi or CBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.
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