{"title":"室温下塑料衬底上的柔性ZnO薄膜晶体管","authors":"Y. Sun, Y. Kimura, T. Maemoto, S. Sasa","doi":"10.1109/IMFEDK.2013.6602240","DOIUrl":null,"url":null,"abstract":"We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Flexible ZnO thin-film transistors on plastic substrates produced at room temperature\",\"authors\":\"Y. Sun, Y. Kimura, T. Maemoto, S. Sasa\",\"doi\":\"10.1109/IMFEDK.2013.6602240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flexible ZnO thin-film transistors on plastic substrates produced at room temperature
We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.
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