电阻式开关存储器中NiO层导电丝电阻的温度依赖性

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602253

Yoshihumi Hamada, Takashi Kato, S. Otsuka, Tomohiro Shimizu, S. Shingubara

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引用次数: 1

摘要

研究了含NiO绝缘体的电阻开关存储器的I-V特性和电阻的温度依赖性。在该设备中获得了单极工作模式。从电阻的温度依赖性出发，提出了低阻态为金属导通，高阻态为变程跳变导通。

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Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory

Investigation of I-V characteristic and temperature dependence of resistance in the resistive switching (RS) memory with NiO insulater was performed. Unipolar operation mode was obtained in this device. From temperature dependence of resistance, it is suggested that the low resistance state (LRS) is metallic conduction and the high resistance state (HRS) is variable-range hopping (VRH) conduction.

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2013 IEEE International Meeting for Future of Electron Devices, Kansai

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