{"title":"常压处理InGaZnO薄膜晶体管","authors":"M. Furuta, T. Kawaharamura","doi":"10.1109/IMFEDK.2013.6602270","DOIUrl":null,"url":null,"abstract":"High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atmospheric pressure processed InGaZnO thin-film transistors\",\"authors\":\"M. Furuta, T. Kawaharamura\",\"doi\":\"10.1109/IMFEDK.2013.6602270\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602270\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-mobility indium-gallium-zinc oxide thin-film transistor (IGZO TFT) was demonstrated at 360 °C with the IGZO channel and aluminum oxide (AlOx) gate dielectric stack that was deposited ozone-assisted atmospheric pressure chemical vapour deposition used ultrasonic atomized solution mist as precursors. Field effect mobility of 7.7 cm2/Vs and subthreshold swing of 0.32 V/dec were achieved. These electrical properties are comparable to the vacuum-processed IGZO TFT.
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