AlxTiyO/GaAs(001)金属-绝缘体-半导体结构的I-V特性

2013 IEEE International Meeting for Future of Electron Devices, Kansai Pub Date : 2013-06-05 DOI:10.1109/IMFEDK.2013.6602237

T. Ui, M. Kudo, Toshi-kazu Suzuki

{"title":"AlxTiyO/GaAs(001)金属-绝缘体-半导体结构的I-V特性","authors":"T. Ui, M. Kudo, Toshi-kazu Suzuki","doi":"10.1109/IMFEDK.2013.6602237","DOIUrl":null,"url":null,"abstract":"We investigated I-V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures, in which AlxTiyO thin films were prepared by atomic layer deposition utilizing alternative supply of Al2O3 and TiO2 precursors. From Poole-Frenkel plots, we estimated dielectric constants of AlxTiyO thin films, which are useful as high-k dielectrics for III-V device processing.","PeriodicalId":434595,"journal":{"name":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures\",\"authors\":\"T. Ui, M. Kudo, Toshi-kazu Suzuki\",\"doi\":\"10.1109/IMFEDK.2013.6602237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated I-V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures, in which AlxTiyO thin films were prepared by atomic layer deposition utilizing alternative supply of Al2O3 and TiO2 precursors. From Poole-Frenkel plots, we estimated dielectric constants of AlxTiyO thin films, which are useful as high-k dielectrics for III-V device processing.\",\"PeriodicalId\":434595,\"journal\":{\"name\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Meeting for Future of Electron Devices, Kansai\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2013.6602237\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Meeting for Future of Electron Devices, Kansai","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2013.6602237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们研究了AlxTiyO/GaAs(001)金属-绝缘体-半导体结构的I-V特性，其中AlxTiyO薄膜是利用Al2O3和TiO2前驱体替代供应的原子层沉积制备的。从Poole-Frenkel图中，我们估计了AlxTiyO薄膜的介电常数，这是III-V器件加工中有用的高k介电材料。

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I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures

We investigated I-V characteristics of Al_xTi_yO/GaAs(001) metal-insulator-semiconductor structures, in which Al_xTi_yO thin films were prepared by atomic layer deposition utilizing alternative supply of Al₂O₃ and TiO₂ precursors. From Poole-Frenkel plots, we estimated dielectric constants of Al_xTi_yO thin films, which are useful as high-k dielectrics for III-V device processing.

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2013 IEEE International Meeting for Future of Electron Devices, Kansai

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