I–V characteristics of AlxTiyO/GaAs(001) metal-insulator-semiconductor structures

Abstract

We investigated I-V characteristics of Al_xTi_yO/GaAs(001) metal-insulator-semiconductor structures, in which Al_xTi_yO thin films were prepared by atomic layer deposition utilizing alternative supply of Al₂O₃ and TiO₂ precursors. From Poole-Frenkel plots, we estimated dielectric constants of Al_xTi_yO thin films, which are useful as high-k dielectrics for III-V device processing.