Flexible ZnO thin-film transistors on plastic substrates produced at room temperature

Abstract

We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.