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2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies最新文献

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Nanoscale Si/SiO2 multilayer structures produced by plasma-chemical technology 等离子体化学技术制备纳米级Si/SiO2多层结构
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335629
A. Gismatulin, G. N. Kamaev, A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, Anna S. Gileva
{"title":"Nanoscale Si/SiO2 multilayer structures produced by plasma-chemical technology","authors":"A. Gismatulin, G. N. Kamaev, A. Antonenko, S. Arzhannikova, V. Volodin, M. Efremov, Anna S. Gileva","doi":"10.1109/INTERNANO.2009.5335629","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335629","url":null,"abstract":"Si-SiO2 multilayer nanoscale structures were obtained using а procedures of α-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of α-Si:H with thickness of 50 Å, inserted between the layers of SiO2 with thickness 150 Å has been created. The experimental setup with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The properties of the structures were investigated through the characteristics of MOS capacitors. Electrical measurements reveal significant peculiarities connected with charge transport through prepared multilayer nanoscale structures.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133308172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor 用羰基二烯前驱体在低温脉冲CVD条件下生长钌薄膜
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335628
V. Vasilyev
{"title":"Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor","authors":"V. Vasilyev","doi":"10.1109/INTERNANO.2009.5335628","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335628","url":null,"abstract":"This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006–2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124872823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence study of energy levels in Ge quantum dots in Si 硅中锗量子点能级的光致发光研究
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335645
A. Shklyaev, A. V. Gorbunov, M. Ichikawa
{"title":"Photoluminescence study of energy levels in Ge quantum dots in Si","authors":"A. Shklyaev, A. V. Gorbunov, M. Ichikawa","doi":"10.1109/INTERNANO.2009.5335645","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335645","url":null,"abstract":"We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129541034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tubular micro- and nano- sensors and actuators for aerodynamics 用于空气动力学的管状微纳米传感器和致动器
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335627
V. Seleznev, V. Prinz, Vladimir A. Aniskin, A. Shiplyuk
{"title":"Tubular micro- and nano- sensors and actuators for aerodynamics","authors":"V. Seleznev, V. Prinz, Vladimir A. Aniskin, A. Shiplyuk","doi":"10.1109/INTERNANO.2009.5335627","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335627","url":null,"abstract":"New data on the fabrication and study of semiconductor micro- and nanotubes, and also on the application of such micro- and nanotubes as basic elements in sensors and actuators are reported. Fabrication methods for tubular micro- and nanosensors and actuators are described, and examples of fabricated devices are presented. The potential offered by the fabricated pilot devices in aerodynamic applications is demonstrated.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126504051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat flux sensor modeling 热通量传感器建模
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335630
V. Gridchin, O. V. Lobach
{"title":"Heat flux sensor modeling","authors":"V. Gridchin, O. V. Lobach","doi":"10.1109/INTERNANO.2009.5335630","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335630","url":null,"abstract":"In this paper the silicon micromachined heat flux sensor is present. A thermal resistance of the sensor is defined by simple model and finite element model. Temperature distribution inside heat flux sensor is received. Modeling results is compared with experimental data.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115567793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate GaAs(001)衬底上铟外延中滴孔的双峰分布
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335647
A. Lyamkina, D. Dmitriev, Y. G. Galitsyn, S. P. Moshchenko, A. Toropov
{"title":"Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate","authors":"A. Lyamkina, D. Dmitriev, Y. G. Galitsyn, S. P. Moshchenko, A. Toropov","doi":"10.1109/INTERNANO.2009.5335647","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335647","url":null,"abstract":"The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5·107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125116534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors 基于窄带半导体的多元件CID光电探测器工作的基本问题
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335643
B. G. Vainer
{"title":"Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors","authors":"B. G. Vainer","doi":"10.1109/INTERNANO.2009.5335643","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335643","url":null,"abstract":"A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"705 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Four-terminal piezoresistive transducer: Theory and perspectives 四端压阻式换能器:理论与展望
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335610
A. Gridchin
{"title":"Four-terminal piezoresistive transducer: Theory and perspectives","authors":"A. Gridchin","doi":"10.1109/INTERNANO.2009.5335610","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335610","url":null,"abstract":"At present, two various schemes are using for pressure sensors. They are: piezoresistive Wheatstone bridge and Four-Terminal Sillicon Piezoresistive transducer (FTSP).","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115450774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the way to electronic nose 在去电子鼻的路上
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335641
Alexander M. Guliaev, O. B. Sarach, M. Slepneva, A. V. Titov, O. B. Mukhina, Andrey I. Vanin
{"title":"On the way to electronic nose","authors":"Alexander M. Guliaev, O. B. Sarach, M. Slepneva, A. V. Titov, O. B. Mukhina, Andrey I. Vanin","doi":"10.1109/INTERNANO.2009.5335641","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335641","url":null,"abstract":"Two kinds of electronic nose are developed. First one is in the view of matrix of 24 gas sensors on the base of thin films of tin dioxide. The results of modeling are given. The second kind of devise uses the dynamical characteristics of heterogeneous reactions of two sensors. The recognition of reagents based on comparison of reaction of sensors with earlier formed pattern of reactions, obtained by using the correlation coefficient. The perspectives of using the neuron networks for making this analysis is reported.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132096700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal imaging microscopy: Application for diagnostics the microelectronic devices 热成像显微镜:在微电子器件诊断中的应用
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335612
G. L. Kuryshev
{"title":"Thermal imaging microscopy: Application for diagnostics the microelectronic devices","authors":"G. L. Kuryshev","doi":"10.1109/INTERNANO.2009.5335612","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335612","url":null,"abstract":"Thermal imaging microscopy have wide possibilities for scientific and technical applications","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128614727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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