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2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies最新文献

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FEM simulation of piezoresistive pressure module 压阻式压力模块的有限元仿真
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335638
V. Gridchin, M. A. Chebanov
{"title":"FEM simulation of piezoresistive pressure module","authors":"V. Gridchin, M. A. Chebanov","doi":"10.1109/INTERNANO.2009.5335638","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335638","url":null,"abstract":"The impact of singularity points on stress distribution in piezoresistive module is investigated by means of FEM simulation. Strong influence of singularities on stress distribution in silicon-glass interface is presented in this paper.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128167916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Parameters estimation of the MEM transducer with electrodes produced from different materials 不同材料电极MEM换能器的参数估计
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335625
V. Dragunov, M. N. Lyutaeva
{"title":"Parameters estimation of the MEM transducer with electrodes produced from different materials","authors":"V. Dragunov, M. N. Lyutaeva","doi":"10.1109/INTERNANO.2009.5335625","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335625","url":null,"abstract":"The paper contains mathematical expressions for computation of output power for MEM transducer with electrodes produced from different materials. Dependence of transducer output power on resonance frequency and its dependence on difference between work functions of electrode materials are analyzed.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132562494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Resonance backscattering and negative magnetoresistance in submicron quantum ring interferometer 亚微米量子环干涉仪中的共振后向散射和负磁阻
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335646
D. V. Nomokonov, A. Bykov
{"title":"Resonance backscattering and negative magnetoresistance in submicron quantum ring interferometer","authors":"D. V. Nomokonov, A. Bykov","doi":"10.1109/INTERNANO.2009.5335646","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335646","url":null,"abstract":"Reasons for the occurrence of resonance backscattering peaks in submicron electron ring interferometer are investigated in terms of the model of single-mode resonance trail. The suppression of resonance by magnetic field is explained qualitatively.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"08 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121754761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research methods of absorptivity of nanoscale layers of organometallic compounds in the processes of micromechanics 微观力学过程中有机金属化合物纳米层吸收率的研究方法
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335634
D. Mikhailova, D. V. Chesnokov
{"title":"Research methods of absorptivity of nanoscale layers of organometallic compounds in the processes of micromechanics","authors":"D. Mikhailova, D. V. Chesnokov","doi":"10.1109/INTERNANO.2009.5335634","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335634","url":null,"abstract":"This paper describes the method to study the absorptivity of nanoscale layers of organometallic compounds. This method is based on frustrated total internal reflection phenomenon.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131551214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anisotropy of galvanomagnetic phenomena in epitaxial films of ferroelectric semiconductor PbSnTe:In 铁电半导体PbSnTe: in外延膜中磁现象的各向异性
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335649
A. Klimov
{"title":"Anisotropy of galvanomagnetic phenomena in epitaxial films of ferroelectric semiconductor PbSnTe:In","authors":"A. Klimov","doi":"10.1109/INTERNANO.2009.5335649","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335649","url":null,"abstract":"Giant anisotropic change of current in constant magnet field is observed in films of narrow band semiconductor PbSnTe:In. This phenomenon is considered with regard for ferroelectric properties in terms of the theory of space-charge-limited currents.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115800678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of deformation on conductivity of Ga2O3-In2O3 thin films 变形对Ga2O3-In2O3薄膜电导率的影响
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335642
A. Kozlov, E. A. Kurdyukova
{"title":"The influence of deformation on conductivity of Ga2O3-In2O3 thin films","authors":"A. Kozlov, E. A. Kurdyukova","doi":"10.1109/INTERNANO.2009.5335642","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335642","url":null,"abstract":"Thin films of Ga<inf>2</inf>O<inf>3</inf>-In<inf>2</inf>O<inf>3</inf> are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116777935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the parameters of micromechanical devices with electromagnetic control 电磁控制微机械装置参数的研究
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335621
V. Korneyev
{"title":"Study of the parameters of micromechanical devices with electromagnetic control","authors":"V. Korneyev","doi":"10.1109/INTERNANO.2009.5335621","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335621","url":null,"abstract":"The being developed micromechanical device is designed for control of the optical rays position in space. The device is made in the format of the silicon chip with sizes of 1 × 2 cm and consists of 100 micro-mirrors. Each micromirror has an actuator (an engine) in the form of a magnetic dipole. The device is controlled by an external magnetic field induces a magnetic moment in the dipoles. The device works as a diffraction grating with a variable angle of light, redirecting the reflected light flux into one of the diffraction orders.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130019170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM N-V存储器的发展:PCRAM/FeRAM/ReRAM闪存的发展趋势
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335614
B. Prince
{"title":"Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM","authors":"B. Prince","doi":"10.1109/INTERNANO.2009.5335614","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335614","url":null,"abstract":"Anything that stores two states can be a memory. The challenge is to get: Required Properties and Reliability for intended application at a competitive cost.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127331935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An influence of polyelectrolyte layer on electrophysical properties of MIS structures 聚电解质层对MIS结构电物理性能的影响
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335636
D. Gorin, A. M. Yaschenok, A. O. Manturov, B. N. Klimov
{"title":"An influence of polyelectrolyte layer on electrophysical properties of MIS structures","authors":"D. Gorin, A. M. Yaschenok, A. O. Manturov, B. N. Klimov","doi":"10.1109/INTERNANO.2009.5335636","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335636","url":null,"abstract":"An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126305089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental evaluation of parameters of the capacitive MEMS converters 电容式MEMS变换器参数的实验评估
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI: 10.1109/INTERNANO.2009.5335626
D. Ostertak
{"title":"Experimental evaluation of parameters of the capacitive MEMS converters","authors":"D. Ostertak","doi":"10.1109/INTERNANO.2009.5335626","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335626","url":null,"abstract":"Parameters of the capacitive mechanical-to-electrical energy MEMS converters are investigated experimentally. A comparison of the theoretical calculations performed using simplified models as well as experimental data is carried out. The analysis shows that existing differences between calculated and experimental data are probably related to the additional factors, e.g. parasitic capacity, which arise during measurements and are not taken into considerations in the simplified models.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133404010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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