聚电解质层对MIS结构电物理性能的影响

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335636

D. Gorin, A. M. Yaschenok, A. O. Manturov, B. N. Klimov

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引用次数: 0

摘要

研究了聚电解质层在单晶硅表面吸附下对金属-绝缘体-半导体(MIS)结构电物理性能的影响。在单晶硅表面沉积多电解质层导致MIS结构电阻的变化。聚乙烯亚胺的沉积导致MIS结构的电阻降低，而聚苯乙烯磺酸钠的沉积和吸附的聚电解质层数的增加导致MIS结构的电阻增加。

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An influence of polyelectrolyte layer on electrophysical properties of MIS structures

An influence of polyelectrolyte layers on electrophysical properties of structures metal-insulator-semiconductor (MIS) under its adsorption on the surface of single crystal silicon is shown. Deposition of polyelectrolyte layers on the surface of single crystal silicon leads to change of the resistance of MIS structure. Deposition of polyethylene imine lead to decreasing the resistance of structure whereas following deposition of polystyrene sodium sulfonate and increasing the number of adsorbed polyelectrolyte layers leads to increasing of resistance of MIS structure.

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来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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