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N-V存储器的发展:PCRAM/FeRAM/ReRAM闪存的发展趋势

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335614
B. Prince
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引用次数: 0

摘要

任何存储两种状态的东西都可以是存储器。挑战在于:以具有竞争力的成本获得预期应用所需的性能和可靠性。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Evolution of N-V memories: Flash memory trends with PCRAM/FeRAM/ReRAM
Anything that stores two states can be a memory. The challenge is to get: Required Properties and Reliability for intended application at a competitive cost.
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2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies
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