变形对Ga2O3-In2O3薄膜电导率的影响

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335642

A. Kozlov, E. A. Kurdyukova

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引用次数: 0

摘要

采用磁控管沉积法制备了Ga2O3-In2O3薄膜，并进行了进一步的热氧化。观察到电阻变化与应变时间和应变值的关系。建立了解释所得结果的模型。它是基于多晶氧化物半导体材料的势垒导电性。

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The influence of deformation on conductivity of Ga2O3-In2O3 thin films

Thin films of Ga2O3-In2O3 are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.

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2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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