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2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies最新文献

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Sruface-enhanced Raman spectroscopy 表面增强拉曼光谱
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-10-01 DOI: 10.1109/INTERNANO.2009.5335613
A. Milekhin
{"title":"Sruface-enhanced Raman spectroscopy","authors":"A. Milekhin","doi":"10.1109/INTERNANO.2009.5335613","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335613","url":null,"abstract":"• First observation of SERS by optical phonons in cdS QDS • Enhancement factor reaches 730 • SERS is selective with respect to - QD size - quantum number of confined mode","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124609744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling HARQ system with convolution and block codes 用卷积和分组码对HARQ系统建模
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-10-01 DOI: 10.1109/INTERNANO.2009.5335632
A. Shapin
{"title":"Modeling HARQ system with convolution and block codes","authors":"A. Shapin","doi":"10.1109/INTERNANO.2009.5335632","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335632","url":null,"abstract":"In this issue we proposed the HARQ-Combined system and described principle of working. We built imitation model of the described system, which is completely adjustable. By this model we can get probabilistic-time characteristics. Furthermore we compared proposed system and simple ARQ system.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126349439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
PbSnTe:In-based thin-film microstructures as sensors of IR and terahertz radiation 铟基薄膜微结构作为红外和太赫兹辐射传感器
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-10-01 DOI: 10.1109/INTERNANO.2009.5335623
V. N. Shumskyi
{"title":"PbSnTe:In-based thin-film microstructures as sensors of IR and terahertz radiation","authors":"V. N. Shumskyi","doi":"10.1109/INTERNANO.2009.5335623","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335623","url":null,"abstract":"The density of localized states in PbSnTe:In and the photosensitivity in intrinsic and impurity absorption bands are computed on the basis of theory of space-charge-limited currents and experimental data. Application of microstructures obtained by molecular-beam epitaxy in the quality of sensors of infrared and terahertz radiation is discussed.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"1049 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124053998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micromechanical optical spectral devices with electrostatic control 静电控制的微机械光谱装置
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-10-01 DOI: 10.1109/INTERNANO.2009.5335622
D. Nikulin, V. V. Chesnokov, D. V. Chesnokov
{"title":"Micromechanical optical spectral devices with electrostatic control","authors":"D. Nikulin, V. V. Chesnokov, D. V. Chesnokov","doi":"10.1109/INTERNANO.2009.5335622","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335622","url":null,"abstract":"Interference filters are widely used in physical research, measuring equipment, and industry [1,2]. Their advantages are simplicity and comfort of operation, high monochromaticity of radiation emitted from optical filter. Such devices can get additional advantages, if they are able to tune the allocated bandwidth, that can be achieved using micro- and nanotechnology [3,4]. In the tunable interference optic filters [3,4] the Electric control of the air gap between the mirrors of the Fabry-Perot is used at the gap corresponding to the first order of interference. In the multiplex filter version considered in the report, achievable tuning free range of the spectrum is 0,4–0,8 µm with a resolution of 0,75–1,3 nm.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130136636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Overview of memories markets and texhnical challenge 存储器市场概述和技术挑战
2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-10-01 DOI: 10.1109/INTERNANO.2009.5335618
B. Prince
{"title":"Overview of memories markets and texhnical challenge","authors":"B. Prince","doi":"10.1109/INTERNANO.2009.5335618","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335618","url":null,"abstract":"","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128164435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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