PbSnTe:In-based thin-film microstructures as sensors of IR and terahertz radiation

Abstract

The density of localized states in PbSnTe:In and the photosensitivity in intrinsic and impurity absorption bands are computed on the basis of theory of space-charge-limited currents and experimental data. Application of microstructures obtained by molecular-beam epitaxy in the quality of sensors of infrared and terahertz radiation is discussed.