GaAs(001)衬底上铟外延中滴孔的双峰分布

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335647

A. Lyamkina, D. Dmitriev, Y. G. Galitsyn, S. P. Moshchenko, A. Toropov

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引用次数: 0

摘要

研究了液滴外延初期在砷化镓上形成铟液滴的过程。5·107 cm−2的液滴密度允许产生低密度量子点。揭示了高度分布良好的双峰特征。我们认为在铟沉积过程中，表面出现了额外的成核中心。它们被认为是砷化砷蒸发引起的表面缺陷。根据两组点的体积差估计缺陷出现的时间。

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Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate

The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5·107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.

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来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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