Bimodal distribution of drops and holes in indium epitaxy on GaAs(001) substrate

Abstract

The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5·107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.