{"title":"基于窄带半导体的多元件CID光电探测器工作的基本问题","authors":"B. G. Vainer","doi":"10.1109/INTERNANO.2009.5335643","DOIUrl":null,"url":null,"abstract":"A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"705 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors\",\"authors\":\"B. G. Vainer\",\"doi\":\"10.1109/INTERNANO.2009.5335643\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.\",\"PeriodicalId\":376370,\"journal\":{\"name\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"volume\":\"705 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTERNANO.2009.5335643\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTERNANO.2009.5335643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors
A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.