Photoluminescence study of energy levels in Ge quantum dots in Si

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies Pub Date : 2009-11-13 DOI:10.1109/INTERNANO.2009.5335645

A. Shklyaev, A. V. Gorbunov, M. Ichikawa

引用次数: 2

Abstract

We study the influence of the technological parameters on photoluminescence properties of Ge quantum dots in a Si matrix. We found growth and annealing conditions which provide the formation of Ge quantum dots with two energy levels.

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硅中锗量子点能级的光致发光研究

研究了工艺参数对硅基锗量子点光致发光性能的影响。我们发现生长和退火条件提供了两个能级的Ge量子点的形成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies

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