Fundamental problems of functioning the multielement CID photodetectors on the base of narrow-band semiconductors

Abstract

A review of the number of fundamental problems connected with functioning the multielement (linear and matrix) detectors of infrared radiation based on narrow-band semiconductors which are operating as a charge injection devices (CID) is given in this paper. Such questions as redundant lateral photo-sensitivity of CID elements, cross-talks, electric field instability of MIS structures, operation of photodetectors under the conditions of dynamic exposure, the spectral characteristic of detectors, etc. are discussed.