{"title":"用羰基二烯前驱体在低温脉冲CVD条件下生长钌薄膜","authors":"V. Vasilyev","doi":"10.1109/INTERNANO.2009.5335628","DOIUrl":null,"url":null,"abstract":"This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006–2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor\",\"authors\":\"V. Vasilyev\",\"doi\":\"10.1109/INTERNANO.2009.5335628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006–2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.\",\"PeriodicalId\":376370,\"journal\":{\"name\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTERNANO.2009.5335628\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTERNANO.2009.5335628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ruthenium thin film growth under low temperature pulsed CVD conditions Using carbonyl-diene precursor
This paper is devoted to the investigation of the ruthenium films, chemically vapor deposited under low temperature and sequentially pulsed gas injection conditions. Experimental results presented and published in 2006–2008 have been briefly consolidated. This paper can be interesting to those working in modern precision technologies as well as postgraduate students.