Nanoscale Si/SiO2 multilayer structures produced by plasma-chemical technology

Si-SiO2 multilayer nanoscale structures were obtained using а procedures of α-Si:H thin film depositions and subsequently plasma enhanced oxidation. Thus, a structure containing 6 layers of α-Si:H with thickness of 50 Å, inserted between the layers of SiO2 with thickness 150 Å has been created. The experimental setup with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The properties of the structures were investigated through the characteristics of MOS capacitors. Electrical measurements reveal significant peculiarities connected with charge transport through prepared multilayer nanoscale structures.